Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy

نویسندگان

چکیده

Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy layer. The reversal, recorded through measurements anomalous Hall effect, appearing assistance a static field parallel to current, interpreted terms spin-orbit torque mechanism. Our results demonstrate that an addition small fraction heavy Bi atoms, substituting As atoms prototype DFS (Ga,Mn)As and increasing strength coupling valence band, significantly enhances efficiency thus reducing considerably threshold current density necessary for reversal. findings are technological importance applications torque-driven nonvolatile memory logic elements.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2022

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0124673